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NTP5864N
Power MOSFET
60 V, 63 A, 12.4 m W
Features
? Low R DS(on)
? High Current Capability
? Avalanche Energy Specified
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
V (BR)DSS
60 V
http://onsemi.com
R DS(ON) MAX
12.4 m Ω @ 10 V
I D MAX
(Note 1)
63 A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
Parameter
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage ? Continuous
Symbol
V DSS
V GS
Value
60
± 20
Units
V
V
N ? Channel
D
Steady
Current ? R q JC (Note 1) State
Steady
R q JC (Note 1) State
Gate ? to ? Source Voltage ?
Non ? Repetitive (t p = 10 m s)
Continuous Drain T C = 25 ° C
T C = 100 ° C
Power Dissipation ? T C = 25 ° C
T C = 100 ° C
Pulsed Drain Current t p = 10 m s
Operating Junction and Storage Temperature
Source Current (Body Diode) Pulsed
Single Pulse Drain ? to Source Avalanche
Energy ? (L = 0.1 mH)
V GS
I D
P D
I DM
T J ,
T STG
I S
EAS
IAS
± 30
63
45
107
54
252
? 55 to
175
63
80
40
V
A
W
A
° C
A
mJ
A
G
4
S
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
TO ? 220AB
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T L
260
° C
CASE 221A
STYLE 5
NTP5864NG
AYWW
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1
2
3
1
Gate
3
Source
THERMAL RESISTANCE RATINGS
Parameter
Junction ? to ? Case (Drain) ? Steady State
(Note 1)
Symbol
R θ JC
Max
1.4
Units
° C/W
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb ? Free Package
2
Drain
Junction ? to ? Ambient ? Steady State (Note 1)
R θ JA
33
° C/W
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [2 oz] including traces).
ORDERING INFORMATION
Device Package Shipping
NTP5864NG
TO ? 220
(Pb ? Free)
50 Units / Rail
? Semiconductor Components Industries, LLC, 2011
June, 2011 ? Rev. 0
1
Publication Order Number:
NTP5864N/D
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